The Xilleon™ 226 is packaged in a 186-pin Ball Grid Array (BGA) package. It is fabricated using seven levels of aluminum based metallization employing a single level of silicided gates. Shallow Trench Isolation (STI) is used. This part features 0.11 µm minimum gate length MOS transistors, and a 0.39 µm minimum metal 1 pitch. These dimensions place the part at the 180 nm process technology node according to the ITRS Roadmap.