This report summarizes an exploratory analysis of the dopant structure of the Sony IMX206 [1], which was extracted from the Canon PowerShot SX600HS camera. The report includes scanning electron microscopy (SEM) cross-sectional imaging of the periphery, pixel array edge and pixel array of the IMX206, with glass etch and silicon (Si) etch delineation. The report also includes scanning microwave impedance (sMIM) analysis of the dopant structure of the active Si in the periphery, pixel array edge and pixel array of the IMX206.