Availability
Published
Product Code
CWR-0910-102
Release Date
Product Item Code
SAM-K4B2G0846B-HCF8
Device Manufacturer
Samsung
Device Type
DDR3 SDRAM
Samsung Electronics K4B2G0846B -HCF8 58 nm 2Gb (256M x 8) DDR3 SDRAM - Process Analysis Report

TThis process review focuses primarily on the DRAM cell transistor and capacitor and provides a detailed analysis of the structure and materials. The report also includes a higher level process analysis of the periphery logic aside from the DRAM cell.
The report includes:

  • Major Findings
  • Device Identification
  • General Structure
  • Detailed Structure - Active Direction
  • Detailed Structure - Wordline Direction
  • Memory Capacitor Structure Cross Section
  • Memory Cell Layout
  • Capacitor Materials Analysis
  • Logic Between Memory Blocks
 

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