DRAM Memory Technology Disruptive Product: What technology node for 1st DDR5 DIMM? DDR5 is a new generation of Memory! All the major DRAM players are moving forward to a faster DRAM, DDR5. DDR5 improves power management (1.1V vs. 1.2V for DDR4) as well. One of DDR5 DIMM products has been confirmed

DRAM Memory Technology Micron D1α, '14 nm'! The Most Advanced Node Ever on DRAM! D1α! It’s 14 nm! After a quick view on Micron D1α die (die markings: Z41C) and cell design, it’s the most advanced technology node ever on DRAM. Further, it’s the first sub-15nm cell integrated DRAM product. Micron Z41C

This approach presents two advantages, the Cu-Cu DBI can help reduce the overall height of the Die while Die-to-Wafer hybridization can help reduce the per-Die cost, thereby facilitating greater utilization of Sony’s SWIR technology for a wide range of applications. Recently, TechInsights revealed the first detailed cross-sectional image of the 1.34MP.

February 03, 2021 Logic Disruptive Technology Qualcomm Snapdragon 888 in the Xiaomi Mi 11 brings a new 5 nm entrant to market With their release of the Snapdragon 888, Qualcomm finds itself in competition with other 5 nm offerings - the Apple A14 and the Exynos 2100. With the Snapdragon 888 SoC

January 19, 2021 Image Sensor Disruptive Technology Sony d-ToF Sensor found in Apple’s new LiDAR camera Apple’s LiDAR camera was first observed in 2020’s iPad Pro; as expected, we saw that same part used in the iPhone 12 Pro in October. Industry experts expect that this part will be in use for the

SK hynix has released the world’s first 128-layer (128L) 3D NAND, which they have termed 4D NAND. This is their second NAND generation built using Periphery Under Cell (PUC) architecture; the first was their 96L NAND. In PUC architecture, peripheral circuits are stacked under the cell, resulting in