TechInsights is first and foremost focused on supporting innovation and decision making. Because of the far-reaching interest in this latest technology, we thought we would share some of the discussions we’ve been having. Here are a few of the common questions we are seeing, and our corresponding answers.
Both leading foundries allowed customers to claim they were using a 4nm process when, in fact, they were using 5nm technology. This situation renders node names meaningless. Featured in our July 22 Microprocessor Report we are making this available, in full, for a limited time.
A collaboration between Dr. Stephen Russell (TechInsights) and Prof. Peter Gammon (PGC). ROHM released their 4th generation (Gen 4) MOSFET products this year. The new range includes MOSFETs rated to 750 V (increased from 650V) and 1200 V, with a number of the available TO247 packaged components automotive qualified up to 56A/24mΩ.
New ROHM 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance. Download the product brief for more details, and for a high-resolution image showing the trench structure with annotations.
TSMC 22ULL eMRAM Die removed from Ambiq™ Apollo4 Another Disruptive Technology on Embedded Memory! Another disruptive product on embedded Memory (eMemory) has been arrived and quickly reviewed! TSMC has successfully developed and commercialized 22 nm
NAND Memory Technology Micron B47R 3D CTF CuA NAND Die, the World’s First 176L (195T)! Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its process
DRAM Memory Technology Disruptive Product: What technology node for 1st DDR5 DIMM? DDR5 is a new generation of Memory! All the major DRAM players are moving forward to a faster DRAM, DDR5. DDR5 improves power management (1.1V vs. 1.2V for DDR4) as
DRAM Memory Technology Micron D1α, '14 nm'! The Most Advanced Node Ever on DRAM! D1α! It’s 14 nm! After a quick view on Micron D1α die (die markings: Z41C) and cell design, it’s the most advanced technology node ever on DRAM. Further, it’s the first
This approach presents two advantages, the Cu-Cu DBI can help reduce the overall height of the Die while Die-to-Wafer hybridization can help reduce the per-Die cost, thereby facilitating greater utilization of Sony’s SWIR technology for a wide range of applications. Recently, TechInsights revealed the first detailed cross-sectional image of the 1.34MP.
February 03, 2021 Logic Disruptive Technology Download the brief Qualcomm Snapdragon 888 in the Xiaomi Mi 11 brings a new 5 nm entrant to market With their release of the Snapdragon 888, Qualcomm finds itself in competition with other 5 nm offerings