New ROHM 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance. Download the product brief for more details, and for a high-resolution image showing the trench structure with annotations.

The Samsung Galaxy S22 Ultra has the latest and greatest Qualcomm mmWave, but not in Europe...

TSMC 22ULL eMRAM Die removed from Ambiq™ Apollo4 Another Disruptive Technology on Embedded Memory! Another disruptive product on embedded Memory (eMemory) has been arrived and quickly reviewed! TSMC has successfully developed and commercialized 22 nm eMRAM products with STT-MRAM technology and

NAND Memory Technology Micron B47R 3D CTF CuA NAND Die , the World’s First 176L (195T)! Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its process, structure, and die design. Micron 176L 3D NAND

DRAM Memory Technology Disruptive Product: What technology node for 1st DDR5 DIMM? DDR5 is a new generation of Memory! All the major DRAM players are moving forward to a faster DRAM, DDR5. DDR5 improves power management (1.1V vs. 1.2V for DDR4) as well. One of DDR5 DIMM products has been confirmed

DRAM Memory Technology Micron D1α, '14 nm'! The Most Advanced Node Ever on DRAM! D1α! It’s 14 nm! After a quick view on Micron D1α die (die markings: Z41C) and cell design, it’s the most advanced technology node ever on DRAM. Further, it’s the first sub-15nm cell integrated DRAM product. Micron Z41C

This approach presents two advantages, the Cu-Cu DBI can help reduce the overall height of the Die while Die-to-Wafer hybridization can help reduce the per-Die cost, thereby facilitating greater utilization of Sony’s SWIR technology for a wide range of applications. Recently, TechInsights revealed the first detailed cross-sectional image of the 1.34MP.

February 03, 2021 Logic Disruptive Technology Qualcomm Snapdragon 888 in the Xiaomi Mi 11 brings a new 5 nm entrant to market With their release of the Snapdragon 888, Qualcomm finds itself in competition with other 5 nm offerings - the Apple A14 and the Exynos 2100. With the Snapdragon 888 SoC

January 19, 2021 Image Sensor Disruptive Technology Sony d-ToF Sensor found in Apple’s new LiDAR camera Apple’s LiDAR camera was first observed in 2020’s iPad Pro; as expected, we saw that same part used in the iPhone 12 Pro in October. Industry experts expect that this part will be in use for the

SK hynix has released the world’s first 128-layer (128L) 3D NAND, which they have termed 4D NAND. This is their second NAND generation built using Periphery Under Cell (PUC) architecture; the first was their 96L NAND. In PUC architecture, peripheral circuits are stacked under the cell, resulting in