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13
July
2015

Toshiba/Sandisk 15 nm 16 GB NAND Flash Memory

The Toshiba/Sandisk 15 nm planar 16 GB MLC NAND flash memory has been recently introduced into the...

24
July
2015

Samsung 16 nm 64 GB NAND Flash Memory

The K9PHGY8S7D 64 GB NAND flash memory is used in Samsung’s SM951 solid state disk drive.

23
Sept
2014

Samsung 3D V-NAND Flash Memory

Samsung’s 3D V-NAND features a proprietary vertical cell structure and represents a breakthrough in...

31
Dec
2014

SK Hynix H2JTDG8UD1BMS 16 nm NAND MLC Flash Memory

SK Hynix H2JTDG8UD1BMS, 16 GB, 16 nm node MLC NAND Flash memory used in the Apple iPhone 6 Plus smartphone.

31
Aug
2015

SK-Hynix High Bandwidth Memory (HBM) Package Analysis

AMD has just released their Radeon R9 Fury X Series of GPUs featuring 4 GB of SK-Hynix’s high bandwidth memory (HBM).

07
Aug
2015

Samsung DDR4 SDRAM with TSVs Package Analysis

The report is a detailed structural analysis of the Samsung K4A4G045WD-CRB DDR4 SDRAM with TSVs.

13
May
2015

Samsung K4A8G045WB 8 Gb DDR4 SDRAM 20 nm Node Memory Detailed Structural Analysis

Samsung, the world leader in advanced memory technology, has recently introduced its latest generation 20 nm node...

09
June
2014

SK Hynix 21 nm LPDDR3 SDRAM CircuitVision Analysis

SK Hynix H2JTDG8UD1BMS, 16 GB, 16 nm node MLC NAND Flash memory used in the Apple iPhone 6 Plus smartphone.

21
Aug
2015

UMC 28 nm HKMG Process Detailed Structural Analysis

The devices features metal gate transistors fabricated using a high-k first, metal gate last process, with a nominal 120 nm minimum contacted gate pitch.

22
May
2015

Samsung 14 nm Exynos 7 7420 Logic Detailed Structural Analysis

The 64-bit octa-core Exynos 7 (Exynos 7420) is a high end eight CPU core SoC first used in Samsung’s Galaxy S6 and S6 edge smartphones.

10
Dec
2014

Intel 5Y70 Processor 14 nm Node Logic Detailed Structural Analysis

The report is a detailed structural analysis (LDSA) of the 14 nm node Intel 5Y70 processor. The 5Y70 processor is among the first 14 nm...

29
Aug
2014

Qualcomm Gobi MDM9235 Modem 20 nm HKMG Logic Detailed Structural Analysis

The MDM9235 is a 4th generation Qualcomm® Gobi 9x35 series modem and is Qualcomm’s first modem fabricated using a 20 nm CMOS process.

24
Mar
2015

Analysis of NXP NFC PN548 IC found in Apple iPhone 6 and Samsung Galaxy S6 Edge

The devices features metal gate transistors fabricated using a high-k first, metal gate last process, with a nominal 120 nm minimum contacted gate pitch.

22
May
2015

Qualcomm WTR3925 Circuit Analysis

Qualcomm recently started shipping the world’s first 28 nm transceiver: the WTR3925, and we have completed full circuit analysis...

12
Feb
2015

Broadcom - Technical Analysis Reports

At TechInsights we continue to identify and produce in-depth technical analysis on Broadcom’s key products, delivering insight on...

03
Nov
2014

Qualcomm WTR1625 CircuitVision Analysis of the Analog Circuitry

Expanding high-speed 4G network is driving demand for smartphones with leading-edge technology like the widely used Qualcomm WTR1625...

31
Aug
2015

SK-Hynix High Bandwidth Memory (HBM) Package Analysis

AMD has just released their Radeon R9 Fury X Series of GPUs featuring 4 GB of SK-Hynix’s high bandwidth memory (HBM).

21
Aug
2015

UMC 28 nm HKMG process Logic Detailed Structural Analysis

The devices features metal gate transistors fabricated using a high-k first, metal gate last process, with a nominal 120 nm minimum contacted gate pitch.

07
Aug
2015

Samsung DDR4 SDRAM with TSVs Package Analysis

The report is a detailed structural analysis of the Samsung K4A4G045WD-CRB DDR4 SDRAM with TSVs.

13
July
2015

Toshiba/Sandisk 15 nm 16 GB NAND Flash Memory Memory Detailed Structural Analysis

The Toshiba/Sandisk 15 nm planar 16 GB MLC NAND flash memory has been recently introduced into the market for...

11
Sep
2015

CircuitVision Analysis of the Major Blocks on the Samsung LPDDR4 Mobile DRAM

This Circuit Vision analysis covers circuit extraction, analysis and organization of all major circuit blocks of the Samsung LPDDR4 Mobile DRAM die.

22
May
2015

Qualcomm WTR3925 Circuit Analysis

Qualcomm recently started shipping the world’s first 28 nm transceiver: the WTR3925, and we have completed full circuit analysis...

16
December
2014

Broadcom - Technical Analysis Reports

At TechInsights we continue to identify and produce in-depth technical analysis on Broadcom’s key products, delivering insight on...

24
May
2015

Analysis of NXP NFC PN548 IC found in Apple iPhone 6 and Samsung Galaxy S6 Edge

The devices features metal gate transistors fabricated using a high-k first, metal gate last process, with a nominal 120 nm minimum contacted gate pitch.

20
May
2015

Samsung 14 nm Exynos 7 SoC Multi-Temp Transistor Characteristics

The transistor characteristics report of the 14 nm Node Samsung Exynos 7 7420 SoC provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors.

31
Dec
2014

Samsung 3D V-NAND Flash Memory Transistor Characterization

The transistor characteristics report of the Samsung K9HQGY8S5M 3D V-NAND Flash Memory provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors.

11
Sept
2014

Qualcomm 20 nm node MDM9235M Modem Chipset Multi-Temp Transistor Characteristics

The Techinsights Multi-temperature transistor characteristics report provides key D.C. electrical measurements for two NMOS and two PMOS ...

28
July
2014

Intel 22 nm Xeon E5-4620V2 Haswell Processor Multi-Temperature Transistor Characteristics

The Techinsights Multi-temperature transistor characteristics report provides key D.C. electrical measurements for two NMOS and two PMOS ...

08
Jan
2016

Sandisk/Toshiba 15 nm 128 Gbit NAND Flash Memory Internal Waveform Analysis

The standard waveform analysis will provide details of the programming algorithm and on the internal voltages required to program, read and erase the memory cells.

27
Jan
2014

Samsung 3D V-NAND Flash Memory Transistor Characterization

The probing analysis on the Toshiba (Sandisk/Toshiba) TH58TEG7DDJTA20 19 nm MLC NAND Flash will be completed on one of the dual 64 Gbit dice stacked inside the package.

20
Nov
2014

Macronix MX25L6406E 64 Mbit CMOS Serial Flash Internal Waveform Analysis

This report contains detailed analysis of the Major blocks on the Macronix MX25L6406E 64Mbit CMOS Serial Flash.

28
Sept
2011

Hynix H27UBG8T2ATR 32nm 32Gbit MLC NAND Flash Program Operation Internal Waveform Analysis

This Analysis includes the FIB modifications, and waveform testing for the Hynix H27UBG8T2ATR 32nm 32Gbit MLC NAND Flash.

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TechInsights originated in 1989 as Semiconductor Insights. Now, 25+ years later, we are headquartered in Ottawa, Canada with state of the art labs, an expansive research portfolio and over 180 employees worldwide.

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