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SK hynix H28U74301AMR 3D NAND Flash

This is a report of the SK hynix H28U74301AMR 3D NAND Flash, found in the LG Electronics model F800L, aka the V20..

 
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Toshiba THGBX6T1T82LFXF 3D NAND Flash Process and Circuit Analysis Reports

The NAND Flash in the Apple iPhone 7 256 GB version was populated with the Toshiba brand new 48 layer 3D NAND Flash.

 
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Micron 32L 3D NAND Flash Structural Analysis

This report is a detailed structural analysis of the Micron MT29F768G08EEHBBJ4-3R:B 96 GB 32L 3D NAND Flash Memory.

Process Comparison of 1x and 1y nm NAND Flash Memory Devices manufactured by Toshiba/SanDisk, Micron/Intel, SK hynix and Samsung

This report is a comparison of four leading-edge 1x and 1y nm NAND Flash cell architectures used by Toshiba/SanDisk 15 nm, IM Flash Technologies 16 nm, SK hynix 16 nm and Samsung 16 nm NAND Flash memories.

 
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Micron 20 nm Node 1 GB GDDR5X SDRAM Memory Detailed Structural Analysis

This report is a detailed structural analysis of the 20 nm node Micron MT58K256M32JA-100:A 1 GB GDDR5X SDRAM.

 
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CircuitVision Analysis of the Hynix H9HKNNNBTUMU LPDDR4 Mobile DRAM Memory

This CircuitVision analysis covers circuit extraction, analysis and organization of all unique circuit blocks on a single die in the SK hynix H9HKNNNBTUMU LPDDR4 Mobile DRAM.

CircuitVision Analysis of the Major Blocks on the Samsung LPDDR4 Mobile DRAM

This Circuit Vision analysis covers circuit extraction, analysis and organization of all major circuit blocks of the Samsung LPDDR4 Mobile DRAM die.

SK hynix High Bandwidth Memory (HBM) Package Analysis

AMD has just released their Radeon R9 Fury X Series of GPUs featuring 4 GB of SK hynix's high bandwidth memory (HBM).

 
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Apple A10, TSMC inFO-WLP Package Technology Process Analysis Report

This report is a process analysis report of the Apple A10, TSMC inFO-WLP Package Technology Process.

Sony IMX260 12 Megapixel Backside Illuminated CMOS Image Sensor used in the Samsung Galaxy S7 Smartphone Detailed Structural Analysis

The report is a detailed structural analysis of the Sony IMX260 12 megapixel backside illuminated (BSI) CMOS image sensor used in the Samsung Galaxy S7 smartphone.

Qualcomm Snapdragon 820 Using Samsung's 14 nm LPP finFET Process

This report provides a detailed structural analysis of the core logic transistors in the Qualcomm MSM8996 Snapdragon 820 processor fabricated using Samsung's 14 nm LPP finFET process.

TDK SESUB-PAN-T2541 Bluetooth V4.0 Smart Single Mode Module Package Analysis

The report is a detailed package analysis of the TDK SESUB-PAN-T2541 Bluetooth V4.0 Smart Single Mode Module.

 
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Intel PMB5747 #SMARTi LTE Multimode RF Transceiver CircuitVision Analysis

The PMB5747 is a #SMARTTi multimode RF transceiver that is paired with the #X-Gold 233 PMB8818 baseband processor in the Asus Zenfone 2 smartphone, and the #-Gold 726 PMB9933 baseband processor used in the Microsoft Surface 3 laptop and Samsung Galaxy Alpha smartphone.

Qualcomm WTR4905 Optimized Multimode LTE Transceiver + GPS/GLONASS/BEIDOU Circuit Analysis

The WTR4905 is multimode LTE transceiver that pairs with the Snapdragon 410 and Snapdragon 610/615 processors for use in volume-tier smartphones.

NFC NXP PN549 found in the iPhone 6s CircuitVision Analysis

TechInsights has uncovered NXP's PN549 Near Field Communications (NFC) Controller in the Apple iPhone 6s.

Analysis of NXP NFC PN548 IC found in Apple iPhone 6 and Samsung Galaxy S6 Edge

The devices features metal gate transistors fabricated using a high-k first, metal gate last process, with a nominal 120 nm minimum contacted gate pitch.

 
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Micron 20 nm Node 1 GB GDDR5X SDRAM Memory Detailed Structural Analysis

This report is a detailed structural analysis of the 20 nm node Micron MT58K256M32JA-100:A 1 GB GDDR5X SDRAM.

Micron 32L 3D NAND Flash Structural Analysis

This report is a detailed structural analysis of the Micron MT29F768G08EEHBBJ4-3R:B 96 GB 32L 3D NAND Flash Memory.

Process Comparison of 1x and 1y nm NAND Flash Memory Devices manufactured by Toshiba/SanDisk, Micron/Intel, SK hynix and Samsung

This report is a comparison of four leading-edge 1x and 1y nm NAND Flash cell architectures used by Toshiba/SanDisk 15 nm, IM Flash Technologies 16 nm, SK hynix 16 nm and Samsung 16 nm NAND Flash memories.

Samsung K9DUGB8S7M 0.5 TB 48L V-NAND Flash Memory - Memory Detailed Structural

This report is a detailed structural analysis of the K9DUGB8S7M 48L V-NAND flash memory used in the Samsung T3 2 TB SSD.

 
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Toshiba THGBX6T1T82LFXF 3D NAND Flash Process and Circuit Analysis Reports

The NAND Flash in the Apple iPhone 7 256 GB version was populated with the Toshiba brand new 48 layer 3D NAND Flash.

 
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Intel PMB5750 LTE Tranceiver Circuit Analysis

Apple's use of the Intel modem chipset is a huge event in the industry as Intel modems will represent a minority of iPhone shipments (est. 22 M units in 2016 and 23 M units in 2017).

Intel PMB5747 #SMARTi LTE Multimode RF Transceiver CircuitVision Analysis

The PMB5747 is a #SMARTTi multimode RF transceiver that is paired with the #X-Gold 233 PMB8818 baseband processor in the Asus Zenfone 2 smartphone, and the #-Gold 726 PMB9933 baseband processor used in the Microsoft Surface 3 laptop and Samsung Galaxy Alpha smartphone.

Qualcomm WTR4905 Optimized Multimode LTE Transceiver + GPS/GLONASS/BEIDOU CircuitVision Analysis

The WTR4905 is multimode LTE transceiver that pairs with the Snapdragon 410 and Snapdragon 610/615 processors for use in volume-tier smartphones.

 
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TSMC 16nm finFET Process in the Apple A9 Processor Multi-Temp Transistor Characteristics

The transistor characteristics report of the TSMC 16nm finFET Process in the Apple A9 Processor provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors.

Samsung 14 nm Exynos 7 SoC Multi-Temp Transistor Characteristics

The transistor characteristics report of the 14 nm Node Samsung Exynos 7 7420 SoC provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors.

Samsung 3D V-NAND Flash Memory Transistor Characterization

The transistor characteristics report of the Samsung K9HQGY8S5M 3D V-NAND Flash Memory provides analysis on the DC electrical properties of the logic NMOS and PMOS transistors.

Qualcomm 20 nm node MDM9235M Modem Chipset Multi-Temp Transistor Characteristics

The Techinsights Multi-temperature transistor characteristics report provides key D.C. electrical measurements for two NMOS and two PMOS ...

 
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SanDisk-Toshiba 15 nm X3 (3 bit per cell) 128 Gbit NAND Flash Memory Internal Waveform Analysis

The standard waveform analysis will provide details of the programming algorithm and on the internal voltages required to program, read and erase the memory cells.

Toshiba (Sandisk/Toshiba) TH58TEG7DDJTA20 19 nm MLC NAND Flash Internal Waveform Analysis

The probing analysis on the Toshiba (Sandisk/Toshiba) TH58TEG7DDJTA20 19 nm MLC NAND Flash will be completed on one of the dual 64 Gbit dice stacked inside the package.

Samsung 3D V-NAND Flash Memory Transistor Characterization

The probing analysis on the Toshiba (Sandisk/Toshiba) TH58TEG7DDJTA20 19 nm MLC NAND Flash will be completed on one of the dual 64 Gbit dice stacked inside the package.

Macronix MX25L6406E 64 Mbit CMOS Serial Flash Internal Waveform Analysis

This report contains detailed analysis of the Major blocks on the Macronix MX25L6406E 64Mbit CMOS Serial Flash.

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