Product Code
Release Date
Product Item Code
Device Manufacturer
Everspin Technologies
Device Type
Memory - Embedded & Emerging
Memory - Embedded & Emerging Process
Everspin 1Gb 28 nm pMTJ STT-MRAM Advanced Memory Essentials
This field is used for the Long Desc for the Report Store Item in the eStore.The concise analysis summary report of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features, supported by the following image folders:
  • Package photographs and X-rays, top metal and polysilicon die photographs
  • SEM cross section along the word line (WL) and the bit line (BL) of the ReRAM module
  • TEM cross section along the BL direction (BLD)
  • TEM cross section along the WL direction (BLD)
  • SEM bevel
    • Memory array bevel
    • Memory periphery at the polysilicon gate level
    • Memory periphery at the polysilicon gate level
    The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.

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