Can China Dominate the Power Semiconductor Market?

Can China Dominate the Power Semiconductor Market?
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Does the Power Semiconductor Market Present a Unique Opportunity for China to Pull Ahead of the West?

The international pressure faced by China has forced a focus on internal chip manufacture across the entire semiconductor industry. In this webinar we will focus on the unique opportunity the power semiconductor market provides. With power semiconductors not requiring the same advanced lithographic techniques in the latest logic products could China be positioned to surge ahead of the West in this market segment?

First, we will look at consumer electronics products from the leading names in China’s consumer electronics sector – Huawei, Xiaomi and BBK Electronics. We will see what powers these products and how in some cases China is already leading innovation such as a recent 240 W USB-C charger with power density > 30 W/inch3.

Then we discuss the manufacture of wide bandgap semiconductors and power management integrated circuits (PMICs). We will see products from companies based in China and assess the market disruption these companies are already starting to have. Innoscience being a particular success story for gallium nitride (GaN) design and manufacture, with volume manufacture of 200 mm GaN-on-Si and this year recording the first design win for a GaN device within a mobile handset.



About the Speaker

Dr. Stephen RussellDr. Stephen Russell, Subject Matter Expert, Power Semiconductor Devices

As subject matter expert for power semiconductor Dr. Russell keeps informed of developments across the industry, curating subscription content and maintaining both device and technology roadmaps. These include analysis of discrete devices such as silicon MOSFETs and IGBTs, silicon carbide (SiC) MOSFETs, GaN HEMTs, power packages and silicon-based power management integrated circuits (PMICs). Dr. Russell authors blogs and periodic briefings as well as developing webinars and the annual power semiconductor seminar.

Previously in academia he researched high voltage silicon carbide devices, successfully demonstrating 3.3 kV and 10 kV variants, also leading an exploratory research project into gallium oxide for power devices, presenting findings to the Royal Institution, London. His publications have appeared in journals such as Applied Physics Letters and multiple IEEE journals, garnering over 500 citations and winning the IEEE Transactions on Power Electronics – best paper award in 2018 for the paper ‘High Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC power DMOSFETs’. He moved into industry in 2018 to lead development of a new silicon IGBT product line and instigated an R & D project to use silicon carbide JFETs in circuit protection applications.

Dr. Russell has over 15 years of experience in wide bandgap (WBG) device fabrication and characterisation. He received his PhD in Electronic Engineering in 2013 from the University of Glasgow with a thesis entitled ‘High Performance Hydrogen-Terminated Diamond Field Effect Transistors’ and demonstrated what was at the time the highest frequency diamond transistor reported.

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