• Logic Technology Roadmap

    Advanced logic technology platforms are all now based on FinFETs. Intel lead with the introduction of its 2nd generation FinFET in their 14 nm technology. In order to catch up to Intel, the foundries paused scaling so they could manage risk during their 1st generation FinFET insertion. The Samsung 14LP and TSMC 16FF platforms are effectively on 20 nm class design rules, whereas Intel 14 nm overscaled from 22 nm class design rules. This has allowed Intel to overtake the foundries in routed gate density, by a significant factor. The foundries will be ahead of Intel to introduce a 10 nm platform, and we will soon see how much of a density lead the foundries take back, before Intel releases their 10 nm technology.

    There is intense demand for even lower power, higher performance, at lower cost. This is due to continued strength in mobile and cloud, but also due to a projected explosion in AI-based computing and 5G connectivity as drivers for market growth. To meet this demand, logic technology node scaling plans are accelerating, rather than slowing down, with 7 nm technology just around the corner.

    Fully-Depleted SOI technology has risen as an alternative technology for non-high performance applications, particularly where value-added features such as high-performance analog, RF, and embedded NVM are more important than cost and density. 28 nm class FD-SOI has hit the market and we expect to see more innovative designs on a 22FDX technology platform from Globalfoundries.

    NAND Flash Memory Technology/Products Roadmap

    Observations that have informed this roadmap:

    • Due to strong demand on enterprise, data center and mobile devices, major NAND players are racing to increase the number of vertical gates on their 3D NAND architecture.
    • In 2018 Samsung, SK Hynix, Micron/Intel and Toshiba/WD’s 64L and 72L 3D NAND products are common on the market, and the companies all revealed their next generation 9XL NAND samples.
    • 3D NAND QLC products from Intel are on the market, and Toshiba and Samsung’s 9XL QLC products will follow in 2019.
    • We will see 9XL MP and 128L samples in 2019. Some technology innovations such as Multi-stack 3D NAND (Intel/Micron), 4D NAND (SK Hynix) and Xtacking (YMTC) architecture will be the mainstream for a few more years on 3D NAND.
    • YMTC recently jumped into 3D NAND, and will introduce 32L this year, and 64L Xtacking products in 2019 or 2020.
    • Samsung’s Z-SSD NAND and Toshiba’s XL-FLASH will be competing with Intel XPoint for Enterprise and datacenter.
    • 2D NAND MPs are still on the 14 nm (1Z) technology node.

    Roadmap current as of: September 2018

    Roadmap current as of: September 2018

    DRAM Technology/Products Roadmap

    Observations that have informed this roadmap:

    • With the DRAM market still booming, all the major DRAM players such as Samsung, SK Hynix, Micron and Nanya are eager to develop and release their next new successfully-scaled-down generation.
    • The top 3 DRAM manufacturers have already jumped into the sub-20 nm technology node, by introducing offerings such as 1X nm in 2017 and 2018, and DRAM down-scaling will continue within a few years.
    • Given that DRAM cell TR engineering and capacitor structures offer limited capability to further scale down to 1Y or 1Z nm, major players may look to adopt new technology innovations such as pillar cell capacitors, higher-k capacitor dielectrics, dual work-function layers for buried wordline gates and lower-k dielectric spacers.
    • 1T-DRAM or capacitorless DRAM products with 4F2 cell design may not be seen for a while, but we will see DDR5, LPDDR5 and GDDR6(X) products on the commercial market by the end of this year or early next year at the latest.
    • HBM2 (Samsung, SK Hynix) and HMC2 (Micron) are now widely used for GPU (AMD, NVIDIA).
    • Finally, some new Chinese DRAM companies - including UniIC, Innotron and JHICC – have introduced their products to the market.

    Emerging Memory Technology/Products Roadmap

    Observations that have informed this roadmap:

    • In 2017 and 2018, Intel XPoint technology with PCM/OTS structure has been one of the hottest products in the emerging memory market.
    • Intel’s Optane SSD, DC DIMM and NVDIMM products use XPoint technology.
    • Everspin’s 256 Mb pMTJ STT-MRAM and Adesto’s 2nd generation CBRAM devices are on the market as standalone products this year.
    • In 2019, we may be able to find TSMC and Everspin/GF eMRAM, TSMC eReRAM, Panasonic/UMC OxRAM, and NANTERO DDR4 NRAM as well.
    • Samsung (STT-MRAM), Crossbar/SMIC (ReRAM), Fujitsu (ReRAM, FeRAM), Weebit Nano (ReRAM), LAPIS (FeRAM) and Avalanche/UMC (eMRAM) are the major players and developers of emerging memory devices.
    • We are still awaiting Micron’s QuantX products with XPoint technology.

    Roadmap current as of: September 2018

    IoT Roadmap

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