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Published: 6 July 2016

This report presents a Process Review of the Maxim PB38C-0 die. This report contains the following detailed information:

  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to polysilicon
  • Transmission electron microscopy (TEM) cross-sectional micrographs of the logic MOS and LDMOS transistors, selected metal/dielectric stack features, and interlevel MIM capacitors
  • Scanning microwave impedance microscopy (sMIM) images of wells
  • Secondary ion mass spectrometry (SIMS) doping profile analysis of wells and silicon substrate
  • Spreading Resistance Profiling (SRP) of the silicon substrate
  • Planar SEM images of selected circuit elements at polysilicon
  • Report Description

    This report presents a Process Review of the Maxim PB38C-0 die.

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