Interested in this report?

Published: 6 July 2016

This report presents a Process Review of the Maxim PB38C-0 die. This report contains the following detailed information:

  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to polysilicon
  • Transmission electron microscopy (TEM) cross-sectional micrographs of the logic MOS and LDMOS transistors, selected metal/dielectric stack features, and interlevel MIM capacitors
  • Scanning microwave impedance microscopy (sMIM) images of wells
  • Secondary ion mass spectrometry (SIMS) doping profile analysis of wells and silicon substrate
  • Spreading Resistance Profiling (SRP) of the silicon substrate
  • Planar SEM images of selected circuit elements at polysilicon
  • Product Teardown Report Description

    This report presents a Process Review of the Maxim PB38C-0 die.

    Recent OMR Reports

    Buy Now  |   Price: $9,000.00 (USD)   |   Report  |  DEF-1709-802  |   Published: 17 November 2017
    The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...
    Buy Now  |   Price: $9,000.00 (USD)   |   Report  |  DEF-1709-803  |   Published: 17 November 2017
    The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...
    Buy Now  |   Price: $50,000.00 (USD)   |   Report  |  SCE-1709-802  |   Published: 16 November 2017
    This project presents a Standard Cell Essentials analysis of the Samsung 8895 Exynos 9 Series application processor, built in Samsung’s 10LPE high-k metal gate (HKMG) FinFET CMOS process. This analysis...