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This report presents a Process Review of the Maxim PB38C-0 die. This report contains the following detailed information: Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors Measurements of vertical and horizontal dimensions of major microstructural features Plan-view optical micrograph of the die delayered to polysilicon Transmission electron microscopy (TEM) cross-sectional micrographs of the logic MOS and LDMOS transistors, selected metal/dielectric stack features, and interlevel MIM capacitors Scanning microwave impedance microscopy (sMIM) images of wells Secondary ion mass spectrometry (SIMS) doping profile analysis of wells and silicon substrate Spreading Resistance Profiling (SRP) of the silicon substrate Planar SEM images of selected circuit elements at polysilicon
This report presents a Process Review of the Maxim PB38C-0 die.