Interested in this report?

Published: 24 September 2018


This report presents a Memory Design – Cell (MDC) layout of the SK Hynix H27EGLM_72L die found inside the SK Hynix H27Q2T8QQA3R-BDG package. The H27Q2T8QQA3R-BDG was extracted from an SK Hynix HFS512GD9TNG-62A0A solid state drive.

This report contains the following detailed information:

  • Package photographs and top metal and polysilicon die photographs
  • SEM cross-sectional micrographs through the NAND cell array showing the general structure of the NAND cell array, die dielectric materials, and major features
  • SEM bevel micrographs through the memory array showing the memory array at the substrate, lower pipe gate, upper pipe gate, mid-height channel tubes, polysilicon plugs over channel tubes, top surface of polysilicon plugs, via 0s, metal 1, metal 2, and metal 3 levels
  • Memory cell layout analysis using colorized and overlaid SEM bevel images
  • Cell Array Circuit Diagram

Report Description

This report presents a Memory Design – Cell (MDC) layout of the SK Hynix H27EGLM_72L die found inside the SK Hynix H27Q2T8QQA3R-BDG package. The H27Q2T8QQA3R-BDG was extracted from an SK Hynix HFS512GD9TNG-62A0A solid state drive.

Recent OMR Reports

EXR-1810-801  |   Published: 3 October 2025
EXR-1810-801 - NXP NFC Controller 100VB27 - Apple iPhone Xs Exploratory Report
EXR-1901-802  |   Published: 12 February 2019
This report presents an Exploratory Analysis of the SK Hynix DRAM 2nd generation high-bandwidth memory (HBM2) package from the AMD 215-0894144 Vega 10 XT graphics processor package.
DEF-1901-801  |   Published: 11 February 2019
The Device Essentials deliverable for imaging devices includes a one page summary of observed device metrics and salient features. The summary is supported by the following unannotated image folders: ...