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The complete AME Part 2 deliverable includes a concise analyst’s summary of critical device metrics, with focus on salient word line and bit line connectivity features and supported by the following analyses and image folders:
Large area scanning electron microscopy (SEM) image mosaic of word line and bit line areas, showing all metal levels required to extract connectivity of the array to the word line and bit line decoder regions
SEM image mosaics viewable in the CircuitVisionsoftware
Low-voltage (LV) and high-voltage (HV) periphery transistor transmission electron microscopy (TEM) detail images
Extended materials analysis, including energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) line scan data
Tabular summary of key dimensions
The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.
This product presents Part 2 of an Advanced Memory Essentials of the Intel 29F01T2ANCTH2 64-Layer 3D NAND flash.