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The Advanced Memory Essentials (AME) deliverable for NAND flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
Downstream product teardown
Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
SEM bevel through the logic region and NAND flash
SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
One (or two) TEM cross sections, orthogonal to the word and/or bit lines, showing the NAND flash array cells, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
TEM bevel through the NAND flash
The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.
This report presents Part 1 of an Advanced Memory Essentials on the Samsung 64-layer 256 Gb 3D V-NAND flash found in the K9CKGY8H5A device.