This report compares the fabrication processes used by Samsung to make their 26 nm (2X nm class) LPPDR3 3GB LPPDR3 PoP memory module. The structures and materials of the 2X memory cell are compared to Samsung’s earlier 3X nm class DDR3 DRAM.
The Samsung K3QF7F70DM-QCE is a 3 GB package on package (PoP) memory module containing six 26 nm LPDDR3 memory dies. The part is fabricated using a four metal, two poly DRAM process and features W/TIN RCAT transistors in the memory array. TiN and SiGe are used for the memory cell capacitor plates along with a multilayer ZrO and AlO capacitor dielectric.
The results presented in this report are derived from scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (TEM-EDS) techniques.