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Published: 29 May 2015


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Report Description

This report includes a full set of hierarchal schematics that are organized for ease of navigation. The K9HQGY8S5M is the industry’s first implementation of a 32 cell vertical NAND memory and marks the departure from conventional planar flash memories. The circuit blocks extracted and analyzed for the report include the memory access (Memory Array and peripherals for one plane), voltage generators, data path and address path and portions of control. This report also includes layout data to allow the audience to cross-probe devices and signals of interest to allow visual correlations between the schematic and layout information for a deeper understanding of the circuit functionality and design.

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