This presents a power package analysis (PKG) of the GaN Systems GS-065-060-3-B 650 V GaN E-HEMT. The product features a low Rds(on) of 25 mOhm, competitive with leading SiC devices in terms of on-resistance. It utilizes ‘GaNPX’ technology for low inductance and thermal resistance for demanding high power applications. It is suited to a wide range of applications such as AC-DC and DC-DC power converters, renewable energy and industrial applications.
The PKG includes observed device metrics and salient features supported by the following unannotated image folders:

• Package photographs
• Die photographs
• Optical and SEM package cross-section photographs
• SEM-EDS spectra of selected package materials

The image set for a PKG project is derived from a package cross sectional analysis, supplemented by jet etch decapsulation, when applicable. Value added information, such as additional planes of cross-sectioning, may be included on a case-by-case basis. The PKG deliverable provides competitive benchmarking information and enables cost-effective tracking of multiple competitors' technology.