Infineon IGI60F1414A1L CoolGaN 600 V IPS Half-Bridge Power Package Analysis

Product Code
Release Date
Product Item Code
Device Manufacturer
Device Type
GaN Power IC
Report Code
This report presents a power package analysis (PKG) of the Infineon IGI60F1414A1L CoolGaN™ 600 V IPS half-bridge. The IGI60F1414A1L integrates two GaN HEMT in a half-bridge configuration alongside a Si controller die and coreless transformer isolation, all packaged within thermally enhanced QFN-28 surface mount package for low system bill of materials. The IGI60F1414A1L is suitable for appliances ranging from 30 – 500 W.
The PKG includes observed device metrics and salient features supported by the following unannotated image folders:
  • Package photographs
  • Die photographs
  • Optical and SEM package cross-section photographs
  • SEM-EDS spectra of selected package materials
The image set for a PKG project is derived from a package cross sectional analysis, supplemented by jet etch decapsulation, when applicable. Value added information, such as additional planes of cross-sectioning, may be included on a case-by-case basis. The PKG deliverable provides competitive benchmarking information and enables cost-effective tracking of multiple competitors' technology.
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