STMicroelectronics SCTH90N65G2V-7 650 V SiC Process Flow Analysis

Product Code
PFA-2009-804
Release Date
24/11/2020
Availability
Published
Product Item Code
STM-SCTH90N65G2V-7
Device Manufacturer
STMicroelectronics
Device Type
SiC Power FET
Subscription
Power Semiconductor
Channel
Power Semiconductor - Silicon Carbide (SiC) Process Flow
Report Code
PFA-2009-804
This report presents a Process Flow Analysis of the STMicroelectronics SCTH90N65G2V-7 650 V silicon carbide power MOSFET, with RDS(on) of 18 mΩ and continuous drain current (ID) of 116 A at 25°C. This device has been developed using STMicro’s advanced and innovative second generation SiC MOSFET technology. Potential applications include power supply for renewable energy systems and high-frequency DC-DC converters.
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