Product Item Code
SiC Power FET
Power Semiconductor - Silicon Carbide (SiC) Process Flow
This report presents a Process Flow Analysis of the STMicroelectronics SCTH90N65G2V-7 650 V silicon carbide power MOSFET, with RDS(on) of 18 mΩ and continuous drain current (ID) of 116 A at 25°C. This device has been developed using STMicro’s advanced and innovative second generation SiC MOSFET technology. Potential applications include power supply for renewable energy systems and high-frequency DC-DC converters.