This report presents a Power Essentials analysis of the GaNPower International Inc. GPIHV30DFN device, which is a single-die N-channel 1200 V E-mode (normally OFF) gallium nitride high electron mobility transistor (GaN HEMT).

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and polysilicon die photographs delivered in the CircuitVision software
• Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process