Cree CGHV59350F GaN Power Essentials Folders

Product Code
PEF-2001-801
Release Date
28/02/2020
Availability
Published
Product Item Code
CRA-CGHV59350F
Device Manufacturer
Cree
Device Type
GaN Power IC
Subscription
Power Semiconductor
Channel
Power Semiconductor - Power Essentials
Report Code
PEF-2001-801
Cree is a market leader in wide band gap semiconductors for power and RF applications. The CGHV59350 is a 350 W, 5.9 GHz GaN HEMT device designed for C-band radar systems. The analysis includes structural analysis of the package and of the GaN die, including detailed TEM analysis of the GaN epitaxial layers. The complete PEF deliverable includes a one-page summary of observed device metrics and salient features, supported by the following unannotated image folders:
  • Package optical photographs, package X-ray images, die photographs, optical photographs of die features
  • Scanning electron microscopy (SEM) plan-view images of the device delayered to the gate level
  • Exploratory cross-sectional plan-view SEM images of the device structure
  • Detailed cross-sectional scanning microwave impedance microscopy (sMIM) analysis of the dopant structures
  • The image set for a standard Power Essentials project is derived from a delayered sample for SEM planar analysis, a single plane of cross-sectioning for SEM structural analysis, and a single sMIM sample for the detailed structural analysis. Value add information such as additional planes of cross-sectioning, may be included on a case-by-case basis

The Power Essentials deliverable provides basic competitive benchmarking information and enables cost-effective tracking of multiple competitors’ technology.
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