Product Item Code
GaN Power IC
Power Semiconductor - Power Essentials
The Cree is a market leader in wide band gap semiconductors for Power and RF applications.The CGHV59350 is a 350 W, 5.9 GHz GaN HEMT device is designed for C-band radar systems. The analysis includes structural analysis of the package and of the GaN die, including detailed TEM analysis of the GaN epitaxial layers.
Get regular, succinct analysis of emerging power process semiconductor products
Fact-based analysis of emerging power semiconductor technologies using Gallium Nitride (GaN) and Silicon Carbide (Sic), and innovative, competing use of Silicon (Si).