This report presents a Memory Floorplan Analysis of the SK Hynix 8G-ALDDR4B die found inside the SK Hynix H5AN8G8NCJR-VKC DDR4 DRAM device.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
• SEM plan-view micrographs at active, word line (WL), and bit line (BL) levels from a beveled sample
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to the polysilicon layer
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and diffusion level die photographs delivered in the CircuitVision software