Product Code
Release Date
Product Item Code
Device Manufacturer
Device Type
Samsung K3UH5H50MM-NGCJ Low Power DDR4X Mobile DRAM 18 nm Exploratory Report
The report summarizes an exploratory analysis of the Samsung K3UH5H50MM-NGCJ low power DDR4X mobile DRAM extracted from the Samsung Galaxy S8 (model SM-G950W). The Samsung K3UH5H50MM-NGCJ contains the K4F8E164HM die, fabricated with an 18 nm DRAM process.

The report includes the following results:
  • Product teardown optical images
  • Package and die optical images
  • Plan-view scanning electron microscopy (SEM) images of the memory array and the memory peripheral areas
  • SEM cross section images along the bit line direction
  • SEM cross section images along the word line direction
  • Dimensional analysis

Make informed business decisions faster and with greater confidence

Start My Free Trial


The authoritative information platform to the semiconductor industry.

Discover why TechInsights stands as the semiconductor industry's most trusted source for actionable, in-depth intelligence.