SK Hynix 128L 3D NAND Circuit Analysis Reports

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The world’s first 128L 3D NAND (referred to as 4D NAND by SK Hynix) SK Hynix 128L TLC 512 Gb die It shows a vertical cell efficiency increased to 87.1 %, and memory bit density with 8.11 Gb/mm2 which is comparable with 9xL QLC dies from Samsung (92L) and KIOXIA (96L).
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