Product Code
Release Date
Product Item Code
Device Manufacturer
Yangtze Memory Technologies
YMTC YMN09TC1B1HC6C 128L 3D NAND 512 Gb TLC 20 nm Process Node Advanced Memory Essentials
This report presents an advanced memory essentials (AME) analysis of the YMTC YMN09TC1B1HC6C (CDT1B die) 128-layer 3D NAND 512 Gb flash memory TLC 20 nm process node. The die uses Gen2 3D NAND from YMTC China (they skipped the 96L generation), and "Xtacking" hybrid die bonding technology (NAND die + logic die).
The concise analysis summary report of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features, supported by the following image folders:
  • Downstream product teardown
  • Package photographs and X-rays, top metal and polysilicon die photographs
  • Scanning electron microscopy (SEM) cross-section along the word line (WL) and the bit line (BL) of the 3D NAND array
  • TEM cross-section along the BL
  • TEM cross-section along the WL
  • SEM/TEM bevel
    • Memory array
    • Memory array edge
    • Periphery at the polysilicon level

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