Product Code
AME-2004-802
Release Date
Availability
Published
Product Item Code
MIC-MT44K32M36RCT-125
Device Manufacturer
Micron Technology
Device Type
DRAM
Subscription
Memory - NAND & DRAM
Channel
Memory - Process
Micron MT44K32M36RCT-125 3rd Gen RLDRAM Advanced Memory Essentials
The Micron Technology MT4KK32M36RCT-125 component is third generation reduced latency DRAM (RLDRAM 3) product. It has a memory density of 1.125 Gb and contains two F57R dies in a FPBGA MCP. The F57R die has a capacity of 576 Mb and a bit density of 5.04 Mb/mm2.
The Advanced Memory Essentials (AME) deliverable comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
  • Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
  • SEM bevel through the logic memory array and peripheral regions
  • SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
  • A single TEM cross section through the MRAM cell and orthogonal to wordlines, showing the MRAM cell, metals and dielectrics, cell transistor gate stack, isolation, and other FEOL features
The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.
 

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