Product Code
AME-2004-802
Availability
Published
Product Item Code
MIC-MT44K32M36RCT-125
Device Manufacturer
Micron Technology
Device Type
DRAM
Subscription
Memory - NAND & DRAM
Channel
Memory - Process
Micron MT44K32M36RCT-125 3rd Gen RLDRAM Advanced Memory Essentials
The Micron Technology MT4KK32M36RCT-125 component is third generation reduced latency DRAM (RLDRAM 3) product. It has a memory density of 1.125 Gb and contains two F57R dies in a FPBGA MCP. The F57R die has a capacity of 576 Mb and a bit density of 5.04 Mb/mm2.
The Advanced Memory Essentials (AME) deliverable comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
The Advanced Memory Essentials (AME) deliverable comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
- Package X-rays, top metal and poly die photographs, non-invasive optical photos of die features
- SEM bevel through the logic memory array and peripheral regions
- SEM cross section of the general device structure, BEOL (metals, dielectrics) and FEOL structures
- A single TEM cross section through the MRAM cell and orthogonal to wordlines, showing the MRAM cell, metals and dielectrics, cell transistor gate stack, isolation, and other FEOL features
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