Product Code
MFR-2002-801
Release Date
Availability
Published
Product Item Code
SAM-K3LK4K40BM-BGCN
Device Manufacturer
Samsung
Device Type
LPDDR5
Subscription
Memory - NAND & DRAM
Channel
Memory - DRAM Floorplan Analysis
Samsung K3LK4K40BM-BGCN 1y nm 12 Gb LPDDR5 Memory Floorplan Analysis
This report presents a Memory Floorplan Analysis of the Samsung K4L2E165Y8 die found inside the Samsung K3LK4K40BM-BGCN. The K3LK4K40BM-BGCN was extracted from the Samsung Galaxy S20+ 5G SM-G986N smartphone. This is the world's first commercially available new generation LPDDR5 in the mass produced smartphones. The LPPDR5 has few advantages compared to the LPDDR4, including higher data rate and less power consumption. Led by Xiaomi and Samsung, more and more smartphone manufacturers will release LPDDR5 powered smartphones in this year and future years.

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • SEM cross-sectional micrographs of the general structure of the die dielectric materials, major features, and transistors
  • Plan-view SEM micrograph of the die delayered to the WL and BL layers
  • Measurements of vertical and horizontal dimensions of major microstructural features
  • Plan-view optical micrograph of the die delayered to the polysilicon layer
  • Identification of major functional blocks on a polysilicon die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and polysilicon die photographs delivered in CircuitVision
  • Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process
 

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