Memory Detailed Structural of the 20 nm Node Micron MT58K256M32JA-100:A 1 GB GDDR5X SDRAM

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Micron Technology
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This report is a detailed structural analysis of the 20 nm node Micron MT58K256M32JA-100:A 1 GB GDDR5X SDRAM. The 10-14 Gbps quad data rate (QDR) GDDR5X memory has a 32-bit interface and is packaged in a 190-ball BGA package. The GDDR5X is used in nVidia’s ASUS GeForce GTX 1080 Founders Edition graphics card. The MT58K256M32JA-100:A is fabricated using a four-metal (1-W, 1-Cu, 2 Al) 20 nm CMOS process with stacked capacitors and buried W wordlines. The reported results are derived from scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (TEM-EDS), electron energy loss spectroscopy (TEM-EELS) and spreading resistance profiling (SRP) analyses. Executive Summary Major Findings Device Summary Process Summary 2 Package and Die 3 Process 4 Layout and Structural Analysis of the DRAM Cell 5 Materials Analysis by EDS 6 Critical Dimensions
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