Samsung K3UH7H70AM-AGCL LPDDR4X SDRAM 1y nm Process Advanced Memory Essentials

Product Code
Release Date
Product Item Code
Device Manufacturer
Device Type
Memory - NAND & DRAM
Memory - Process
Report Code
This product presents an Advanced Memory Essentials (AME) Image Set and Summary of the Samsung 1y nm process found in the Samsung K3UH7H70AM-AGCL LPDDR4X SDRAM. The AME deliverable for DRAM chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following image folders:
  • Package photographs and X-rays, top metal and poly die photographs
  • SEM bevel through the memory array and periphery
  • SEM cross section along the word line and bit line of the general device structure, metals, dielectrics, and capacitors
  • Two or three TEM cross sections, orthogonal to the word and bit lines, and possibly active directions of DRAM array, showing the DRAM capacitor array, lower metals and dielectrics, transistor gates, isolation, and other FEOL features
The results of TEM-EDS analyses are included in the AME summary document. The AME deliverable provides timely competitive benchmarking information and enables cost-effective tracking of technical innovation across a breadth of competitors.
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