Micron Technology MT40A1G8SA-062E DDR4 SDRAM Multi-Temperature Transistor Characterization

Product Code
Release Date
Product Item Code
Device Manufacturer
Micron Technology
Device Type
Report Code
This report presents key DC electrical characteristics for peripheral NMOS and PMOS transistors located in the I/O region of the Micron Technology MT40A1G8SA-062E DDR4 SDRAM. The MT40A1G8SA-062E is a high-speed DRAM that uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core, and two corresponding n-bit wide and one-half-clock-cycle data transfers at the I/O pins.
TechInsights Library

A unique vault of trusted, accurate data at your fingertips

Our analysis goes as deep as required to reveal the inner workings and secrets behind a broad range of products.

Don't miss another update from TechInsights.

All our latest content updates sent to you a few times a month.