This report presents a Process Review of the 0.13 µm BDC9S process technology found in the STMicroelectronics FDA801B-VYY automotive 4 x 50 W class-D digital input power amplifier (PA) with I²C diagnostics. It integrates a DAC and can operate with a supply voltage as low as 6 V.

This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• Scanning electron microscopy (SEM) cross-sectional micrographs of the general structure of the die, including dielectric materials, metals, major features, and transistors
• Transmission electron microscopy (TEM) cross-sectional micrographs of the general structure of the die, including dielectric materials, metals, major features, and transistors
• Scanning capacitance microscopy (SCM) and scanning microwave impedance microscopy (sMIM) images of the dopant structures
• Spreading resistance profiling (SRP) was performed in three areas of the die to provide quantitative measures of the substrate doping
• Measurements of vertical and horizontal dimensions of major microstructural features
• Plan-view optical micrograph of the die delayered to metal 3, polysilicon and diffusion
• Identification of major functional blocks on a diffusion die photograph
• Table of functional block sizes and percentage die utilization