Stephen Russell

Dr. Russell has over 15 years’ experience in wide bandgap (WBG) device fabrication and characterization. He received his PhD in Electronic Engineering in 2013 from the University of Glasgow with a thesis entitled ‘High Performance Hydrogen-Terminated Diamond Field Effect Transistors’ and demonstrated what was at the time the highest frequency diamond transistor reported. Continuing in academia, he researched high voltage silicon carbide devices, and successfully demonstrated 3.3 kV and 10 kV variants. He won the IEEE Transactions on Power Electronics – best paper award in 2018 for the paper ‘High Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC power DMOSFETs’. He also led an exploratory research project in gallium oxide for power devices, presenting findings to the Royal Institution, London. He moved into industry in 2018 to lead development of a new silicon IGBT product line and instigated an R & D project to use silicon carbide JFETs in circuit protection applications. In 2020, he joined TechInsights as subject matter expert for power semiconductor devices keeping abreast of developments across the entire industry.