This report compares the fabrication processes used by major manufacturers to produce NAND Flash at the 2x nm node (i.e. 20- 29 nm). The manufacturers covered are Samsung, IMFT, Intel, Toshiba and Hynix.
The report compares cell topography, wells, isolation , the NAND string (overhead included), memory array edge, and wordline decoders. The NAND cell for each device is examined using SEM, TEM, and other analytical techniques revealing details of the tunnel oxide, floating gate, inter-poly, control gate and any air-gaps found.