This report compares the fabrication processes used by major manufacturers to produce NAND Flash at the 2x nm node (i.e. 20- 29 nm). The manufacturers covered are Samsung, IMFT, Intel, Toshiba and Hynix.
The report compares cell topography, wells, isolation , the NAND string (overhead included), memory array edge, and wordline decoders. The NAND cell for each device is examined using SEM, TEM, and other analytical techniques revealing details of the tunnel oxide, floating gate, inter-poly, control gate and any air-gaps found.

Recent OMR Reports


TechInsights originated in 1989 as Semiconductor Insights. Now, 25+ years later, we are owned by private equity – AXIO Data Group – and are headquartered in Ottawa, Canada with state of the art labs, an expansive research portfolio and over 180 employees worldwide.