Interested in this report?

Published: 4 June 2013

This report compares the fabrication processes used by major manufacturers to produce NAND Flash at the 2x nm node (i.e. 20- 29 nm). The manufacturers covered are Samsung, IMFT, Intel, Toshiba and Hynix.
The report compares cell topography, wells, isolation , the NAND string (overhead included), memory array edge, and wordline decoders. The NAND cell for each device is examined using SEM, TEM, and other analytical techniques revealing details of the tunnel oxide, floating gate, inter-poly, control gate and any air-gaps found.

Recent OMR Reports

Buy Now  |   Price: $7,500.00 (USD)   |   Report  |  FAR-1707-804  |   Published: 29 September 2017
This report presents a Digital Functional Analysis of the Neul Boudica die found inside of the Neul Hi2110 NB IoT modem. The Hi2110 component was extracted from the Quectel BC95B5HB-02-STD NB IoT module....
Buy Now  |   Price: $19,500.00 (USD)   |   Report  |  ACE-1707-802  |   Published: 29 September 2017
The Advanced CMOS Essentials (ACE) deliverable for NAND Flash chips comprises a concise analyst’s summary document highlighting observed critical dimensions and salient features supported by the following...
Buy Now  |   Price: $19,500.00 (USD)   |   Report  |  ACE-1704-804  |   Published: 28 September 2017
The report presents an Advanced CMOS Essentials Packaging Analysis on the Intel HJ8066702859300 Xeon Phi 7210 processor. The Advanced CMOS Essentials (ACE) deliverable for Advanced Packing comprises...