Winbond W63AH2NBVABE 25nm LPDDR3 1Gb Memory Floorplan Analysis

Winbond W63AH2NBVABE 25nm LPDDR3 1Gb Memory Floorplan Analysis

 
Share This Post
 
 

This is a Memory Floorplan Analysis (MFR) of the Winbond LPDDR3 SIRIUS D2D3 die with a memory capacity of 1 Gb and a 25 nm generation node. The memory arrays with array peripheral takes about 52% of the die area. The die area occupied by memory sub-arrays is estimated to be about 38%.

Read the full report

The authoritative information platform to the semiconductor industry.

Discover why TechInsights stands as the semiconductor industry's most trusted source for actionable, in-depth intelligence.