Unlocking the Challenges of 3D NAND Height: HAR and Process Struggles

Unlocking the Challenges of 3D NAND Height: HAR and Process Struggles

Explore the forefront of NAND innovation with Samsung leading the charge in reducing vertical gate pitch. Discover how string heights escalate, showcasing the evolving complexity of 3D NAND technology.

In the NAND technology landscape, reducing the vertical gate pitch is a shared goal among major players like KIOXIA, SK hynix, Micron, YMTC, and Samsung. However, this endeavor is fraught with challenges due to concerns over cell interference, wordline crosstalk, and gate replacement complexities. Despite these hurdles, Samsung leads with the smallest vertical gate pitch, currently at 43 nm or 44 nm, highlighting its commitment to innovation.




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Moreover, the trend in 3D NAND vertical string heights reflects increasing complexity with each generation. While earlier iterations boasted heights around 3 µm, recent releases like the 232L and 236L reach approximately 12 µm. Samsung consistently achieves the lowest string heights across generations, showcasing its prowess in optimizing NAND architecture. Additionally, advancements in mold thickness, linked to gate pitch, underscore Samsung's dedication to refining 3D NAND technology.

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