Texas Instruments LMG2610 650 V GaN Half-Bridge Power IC Power Floorplan Analysis

This report presents a Power Floorplan Analysis of the Texas Instruments (TI) LMG2610 device. The LMG2610 device is a half-bridge composed of 650 V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) that is highly integrated and designed to be used in active-clamp flyback (ACF) converters.

Read the full report