T1-2024 Emerging and Embedded Memory Briefing

Author: Jeongdong Choe

T1-2024 Emerging and Embedded Memory Briefing

Eventually, will emerging memory technologies and devices be the heroes of the future AI Era? Due to the recently ever-increasing AI and big data demands, higher-performance and higher-reliability memory devices such as STT-MRAM, PCRAM, and ReRAM are becoming more attractive to the industry. Emerging and Embedded memory devices are keeping up with AI-accelerated solutions by evolving with the cell and CMOS scaling and new storage layer materials to replace eNOR Flash and eDRAM-based cache memory.

TechInsights just released the Emerging and Embedded Memory Briefing for T1-2024. In the briefing, we reviewed the recent progress of emerging non-volatile memories (NVM), including technology trends, comparisons, challenges, and opportunities of emerging NVM devices such as STT-MRAM, PCRAM, ReRAM/CBRAM, and FeRAM for storage-class memories, embedded NVMs, and near/in-memory computing applications.

Some of the key takeaways are:


Up to date, the major emerging memory technologies scaled down to 40 nm through 22/20 nm technology nodes, only except FeRAM which still keeps 130 nm CMOS platforms. STT-MRAM and ReRAM devices are more actively, continuously, and successfully developed and commercialized than other memory types. Automotive, AI, and IoT applications are among the growth drivers. The Processing in Memory (PIM) or Accelerator in Memory (AiM) applications will be placed between the L4 cache and HBM or DRAM products, while Compute Express Link (CXL) Memories will be placed onto the higher-speed SCM. Near data processing (NDP) and In-storage processing (ISP) applications demand SCM emerging memory, too.

Don't miss out on this informative briefing for further insights.

The authoritative information platform to the semiconductor industry.

Discover why TechInsights stands as the semiconductor industry's most trusted source for actionable, in-depth intelligence.