Samsung D1z LPDDR5 DRAM with EUV Lithography (EUVL)
Finally! After months of waiting, we have seen Samsung Electronics’ applied Extreme Ultraviolet (EUV) lithography technology for D1z DRAM in mass production! Early last year, Samsung Electronics announced the world’s first development of both ArF-i based D1z DRAM and EUV lithography (EUVL) applied D1z DRAM separately. TechInsights is excited that we have finally found and confirmed Samsung’s new and advanced D1z DRAM devices and details of this technology.
Samsung Electronics has developed their D1z 8 Gb DDR4, D1z 12 Gb LPDDR5, and 16 Gb LPDDR5 DRAM devices as well with higher performance. We found both D1z 12 Gb and D1z 16Gb LPDDR5 chips in the Samsung Galaxy S21 5G series; S21 5G, S21+ 5G and S21 Ultra 5G just released in January 2021.
Samsung D1z 12 Gb LPDDR5 chips are being used for Samsung Galaxy S21 Ultra 5G SM-G998B/DS 12GB RAM, while D1z 16 Gb LPDDR5 chips can be found from S21 5G and S21+ 5G 8 GB RAM components....
Dr. Jeongdong Choe, Senior Technical Fellow
Dr. Jeongdong Choe is a Senior Technical Fellow at TechInsights. He has nearly 30 years of experience in the semiconductor industry, R&D and reverse engineering on DRAM, NAND/NOR FLASH, SRAM/Logic and emerging memory. He worked for SK Hynix and Samsung Electronics for over 20 years. He joined TechInsights and has been focusing on technology analysis on semiconductor process, device and architecture. He has written many articles on memory technology including DRAM technology trend, 2D and 3D NAND process/device integration details, and Emerging memory such as STT-MRAM, XPoint, ReRAM and FeRAM design and architecture. He quarterly produces and updates a widely distributed memory roadmaps on DRAM, NAND and Emerging memory.