ROHM Gen 4 Discussion:
Comparing to the Broader SiC Market
Dr. Stephen Russell
Prof. Peter Gammon
Earlier this year, ROHM released their 4th generation (Gen 4) MOSFET products. In this two-part video series, we take a deeper look at how this advance in technology may be the first step in a revolution within power semiconductor devices.
The new range includes MOSFETs rated to 750 V (increased from 650V) and 1200 V, with a number of the available TO247 packaged components automotive qualified up to 56A/24mΩ. This is a line-up that suggests ROHM will continue to target the on-board charger market where they have had previous success.
Part One: Dr. Russell and Prof. Gammon look at the state of play of Silicon Carbide devices within the market and the benefits they give over Silicon, such as vastly reduced specific On-resistance (RDS(ON)*A).
Part Two: Dr. Russell and Prof. Gammon go into a deeper analysis of planar layouts (including the cell structure), trench layouts, and the ROHM 4th generation process flow. They will discuss how ROHM’s Gen 4 Mosfet products compare to other within the Power Semiconductor market, such as Wolfspeed, STMicroelectronics, Infineon and onsemi.
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