Renesas R7F702300BFABA-C TSMC 28 nm eFlash Memory Floorplan Analysis

This is a Memory Floorplan Analysis (MFR) of the TSMC R7F702300B die with a memory capacity of 16 MB and 28 nm HPL technology. Within the eFlash macro, memory sub-arrays take about 69% of the area, while memory array with array peripherals covers about 84% of the macro space.

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