Qualcomm QCA6696 Wi-Fi 6/BT 5.2 SoC Floorplan Analysis (IoTB)

Qualcomm QCA6696 Wi-Fi 6/BT 5.2 SoC Floorplan Analysis (IoTB)

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This report presents a Basic Floorplan Analysis (BFR) of the Qualcomm HG11-YG502-200 die found inside Qualcomm QCA6696. The QCA6696 was extracted from the Quectel AF50T, an automotive-grade Wi-Fi/BT module fabricated based upon the Qualcomm's Wi-Fi 6 chip, the QCA6696. The Qualcomm HG11-YG502-200 RF transceiver die is fabricated using a dual-layer passivation, 10 metal interconnect layers (one Al top layer, nine Cu layers), W contacts, shallow trench isolation (STI), and high-k metal gate (HKMG) transistors. The minimum observed metal, contacted gate, and fin pitches are 67 nm, 80 nm, and 48 nm, respectively. These measured critical dimensions, along with the observed features of the transistors, suggest that the HG11-YG502-200 die was manufactured on 300 mm wafers using Samsung's 14 nm HKMG finFET CMOS process.

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