GaN USB-C Charger Market Heating Up in 2021
Gallium nitride (GaN) based high power USB chargers for smartphones, tablets and laptops is a growing area in the power electronics market. TechInsights has been monitoring this market for the past couple of years (please see the references listed below) and we are now seeing GaN based chargers from major original equipment manufacturers (OEMs). The market is getting a further boost since Apple decided to release the iPhone 12 without a charger. The initial design wins observed by TechInsights were based on Navitas Semiconductor reference designs and were produced by small start ups and kick-starter vendors. Power Integrations design wins were also found. In this short article, we will review recent results from the TechInsights Labs for several different USB-C chargers. A complete set of teardown images of each chargers discussed here can be found in the Analyst Dropbox.
Xiaomi MDY-12-EQ 55 W GaN USB-C Charger MDY-12-EQ
The Xiaomi MDY-12-EQ was released in late 2020 and is capable of a maximum of 11 V at 5 A or 55 W. The TechInsights’ sample was procured on January 8, 2021. This USB-C charger was found to contain the Navitas Semiconductor NV6115. The full list of components found inside the MDY-12-EQ is listed here in the Analyst Dropbox.
MINIX NEO P1 66 W GaN USB-C Charger
The MINIX NEO P1 is a 66 W 3 port GaN-based charger. It features USB-C and USB-A ports The TechInsights’s sample was procured on December 30, 2020. MINIX is based in Kowloon Bay, Hong Kong. The MINIX NEO P1 charger contains the Innoscience INN650D02 GaN-based power FET. A full analysis of the 650 V Innoscience INN650D02 is available to TechInsights Power Essentials subscribers. The full list of components found inside the NEO P1 is listed here in the Analyst Dropbox.
ON HOP5334A Ferris Wheel 63 W USB-C Charger
The ON HOP5334A Ferris Wheel is a 63 W max USB-C charger available in China. It features USB-C and USB-A charging ports. The TechInsights’ samples were procured on February 17, 2021. The ON HOP5334A was found to contain the GaN Systems GS-065-011-1-L GaN-based power FET. A Power Floorplan analysis of the GS-065-011-1-L is available to TechInsights GaN Power Floorplan subscribers. The full list of components found inside the HOP5334A is listed here in the Analyst Dropbox.
Dell PA901C 90 W USB-C Charger
The 90 W Dell PA901C USB-C charger is designed for Notebook charging. It features USB-C and USB-A ports. The TechInsights’ samples were procured on February 12, 2021. The PA901C was found to contain two Navitas Semiconductor NV6117 GaN power ICs. A Power Essentials analysis of the NV6117 is is provided as the sample report in the TechInsights Power channels. The full list of components found inside the PA901C is listed here in the Analyst Dropbox.
The technical specifications, including estimated power density, for the four chargers discussed here are summarized in the following table. The Xiaomi and MINIX chargers provide the highest power density, at 12.6 W/in3. The Xiaomi and Dell chargers are based on the Navitas Semiconductor GaNfast power IC technology, while the ON charger is based on the GaN Systems technology and the MINIX is based on Innoscience technology.
|Manufacturer||Charger Model||Power (W)||X (mm)||Y (mm)||Z (mm)||Volume (mm3)||Power Density (W/in3)||Weight (g)||Power Density (W/g)|
- GaN, SiC, and Si technologies in AC Adapters (TechInsights blog)
- Inside the Apple 1720 Charger included with the iPhone 11 Pro Max (TechInsights blog)
- AC Adapters: GaN, SiC or Si? (EETimes)
- Webinar: Emerging GaN Technology in USB-C Power Delivery Adapters (TechInsights webinar)
- A New Player Emerges in the GaN Charger Market – Innoscience INN650D02 Found Inside the Rock RH-PD65W USB-C Charger (TechStream blog)
- Competing Integrated GaN and NonGaN Technologies in USB Wall Chargers (EE Power)
Sinjin Dixon-Warren, Senior Process Analyst
Sinjin Dixon-Warren is a Senior Process Analyst at TechInsights with over 20 years of experience with semiconductor analysis and is a Subject Matter Expert (SME) for Power Electronics Analysis. He holds a PhD in chemical physics from the University of Toronto; some of his specialties include semiconductor physics and devices, materials science and surface analytical chemistry.