onsemi NVH4L022N120M3S Automotive M3S EliteSiC 1200V, 22mOhm N-Channel SiC Power MOSFET Power Essentials Analysis
This is a Power Essential Analysis (PEF) of the onsemi NVH4L022N120M3S device of the M3S family. The NVH4L022N120M3S EliteSiC is a 1200 V, single N-channel enhancement-mode silicon carbide-based power MOSFET. The device features continuous source/drain (S/D) current of 89 A (at 25°C) with typical 22 mΩ S/D ON-resistance (RDSON) at gate-to-source voltage (VGS) 18 V. The device is optimized for automotive on-board chargers and DC-DC converters for EV/HEV. The part came to TechInsights as a component.
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