Neo Takes DRAM To a New Dimension
Neo’s 3D X DRAM technology promises an 8× increase in DRAM capacity with a per-bit cost one-sixth that of conventional DRAM. The company seeks a partner for silicon implementation.
Neo Semiconductor aims to alter the system-memory landscape with a 3D DRAM that could result in an 8× increase in capacity. The new memory cells may also increase data retention, reducing the necessary refresh frequency.
A new memory-cell structure replaces conventional DRAM capacitors with floating gates, removing the ungainly component as a barrier to vertical scaling. Neo bases its technology on the 3D technologies pioneered and proven by makers of 3D NAND flash. The company hopes to reduce risk by limiting the changes it makes when adapting the technology to DRAM.
3D X DRAM combines two changes: a new cell that permits 3D stacking and an architectural change previously employed in the company’s conventional 2D version, called X DRAM. Performance for 3D X DRAM will include the impact of stacking and the revised architecture. The company is actively seeking to license a partner for silicon implementation of the new ideas.
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