Inside the STMicroelectronics MasterGaN1 Integrated GAN High Voltage Half-Bridge -TechStream Power Semiconductor Blog

Sinjin Dixon-Warren
Sinjin Dixon-Warren, Senior Process Analyst
Sinjin Dixon-Warren is a Senior Process Analyst at TechInsights with over 20 years of experience with semiconductor analysis and is a Subject Matter Expert (SME) for Power Electronics Analysis. He holds a PhD in chemical physics from the University of Toronto; some of his specialties include semiconductor physics and devices, materials science and surface analytical chemistry.

November 3, 2020

STMicroelectronics has launched their first foray into the gallium nitride (GaN) power electronics market. The MasterGaN1 is an integrated half-bridge high-voltage driver with two 650 V enhancement mode GaN HEMTs and a bipolar-CMOS-DMOS (BCD) gate driver, according to a recent press release. The two integrated GaN high electron mobility transistors (HEMTs) have an RDSON of 150 mohm and come packaged in a 9 mm × 9 mm quad flat no-lead (QFN) package.

The MasterGaN1 device represents STMicroelectronics first GaN-based product; however, ST has been very active in the GaN market. In March of 2020, ST acquired a major stake in a French company, ExaGaN, and in September 2018 they announced a partnership with CEA-Leti to develop GaN-on-Si technology. In February of 2020, ST and TSMC announced a collaboration to develop GaN-based products.

Inside the STMicroelectronics MasterGaN1 Integrated GAN High Voltage Half-Bridge

 

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