Innoscience INN40W08 40 V Bi-Directional GaN

Found within RealMe GT2 Explorer Master Handset

Innoscience INN40W08


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Gallium nitride (GaN) power semiconductor technology is disrupting the market in consumer electronics. GaN high-electron mobility transistors (HEMTs) are replacing traditional silicon (Si) power MOSFETs in products such as USB-C chargers, offering enhanced performance and the capability to radically shrink their size and weight.

Unlike its next-generation wide bandgap rival silicon carbide (SiC), GaN can offer cheaper and improved solutions at much lower voltage levels. GaN is also finding success at 100 V in markets such as automotive light detection and ranging (LIDAR), brushless DC (BLDC) motor drives, and DC–DC converters running at 48 V (becoming the preferred distribution voltage choice for power-efficient data centers).


This is a landmark moment in the success of wide bandgap technology and a further reputation boost to the reliability of a GaN device. Keep an eye out for further details.

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