Dr. Jeongdong Choe is a Senior Technical Fellow at TechInsights with nearly 30 years’ experience in semiconductor process integration for DRAM, (V)NAND, SRAM and logic devices. He regularly provides blog content to TechInsights Memory subscribers.
September 25, 2020
TechInsights finally found Avalanche 40 nm pMTJ STT-MRAM device and just launch a deep analysis on it. STT-MRAM is still a promising new memory technology with very desirable properties including a very high (more than 20 year) endurance. STT-MRAM devices have been developed and commercialized with in-plane MTJ (i-MTJ) or perpendicular MTJ (p-MTJ) type from many of the MRAM players such as Samsung, Sony, Everspin, Avalanche, Renesas, TSMC, UMC and Intel (Figure 1, MRAM/STT-MRAM Technology & Product Roadmap)
The STT-MRAM cell design and structure used on Renesas M3008204 Serial Peripheral Interface Persistent Memory (Avalanche die marked as shown in Figure 2 and 3) show 40 nm p-MTJ layers with 0.032 µm2 cell size. The MRAM layer placed under M1 source line, between Contact-1 and Contact-2, which is quite unique compared with Samsung’s and Everspin’s. Table 1 shows a briefly summary and comparison of the MRAM technology.
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