Featured Reports

Micron 1x nm DDR Analysis

Posted: May 14, 2018 TechInsights has found the Micron 1x nm process in the Micron DIMM (DDR4) and Huawei Mate 10 (LPDDR4). This process brings about smaller die sizes and increased bit density over its predecessor, but it also presented a bit of a surprise… The Micron 1xs nm. When we analyzed a

Samsung S5K2X7SP 0.9 µm Image Sensor

Posted: March 8, 2018 Samsung S5K2X7SP Image Sensor We did not expect to see the Samsung S5K2X7SP image sensor until Q2, 2018…but here it is in the Vivo V7+. The application is a 24 MP selfie camera that uses Samsung’s Tetracell platform (2x2 pixels per color filter). In well-illuminated scenes the

Toshiba 64L NAND – BiCS FLASH

Posted: January 17, 2018 Toshiba 64L NAND – BiCS FLASH Toshiba released their 64L NAND solution (BiCS FLASH) in a SanDisk Ultra 3d SSD in 2017. TechInsights has conducted a significant amount of analysis on this product, including the following highlights: Memory density reached up to 3.40 Gb/mm 2 ,

Samsung 64L 3D V-NAND

Posted: January 17, 2018 Samsung 64L 3D V-NAND Samsung released their 64L 3D V-NAND solution in January of 2017 for key IT customers, and ramped up production in June for its expanded general market. The innovation included the following highlights: Vertical NAND cell structure with 71 gates and 20

Samsung 18 nm DRAM Analysis

Posted: December 15, 2017 In April 2017, Samsung became the world’s first manufacturer to mass produce 10 nm-class DRAM. In June 2017, TechInsights published a blog based on our first learnings on this innovation that detailed a memory density increase of 32.8% when comparing 8Gb DRAM 18 nm and 20

Intel/Micron 64L 3D NAND Analysis

Posted: November 9, 2017 Intel/Micron 64L 3D NAND Analysis The Intel 545S SSD, introduced in June 2017, was the first product to include the Intel/Micron 64L 3D NAND, and one of the first SSD to use 64L. The device boasts a more compacted die floorplan, improved memory peripheral design, and a 90%

TSMC 10 nm Process

Posted: July 26, 2017 TSMC 10 nm was found in the Apple A10X processor (APL1071) found in the Apple iPad Pro 10.5 (MQDT2CL/A). Taking a deeper look inside the TSMC 10 nm, our experts found quad-patterned FinFETs, which are first in the industry. Our analysis is now available on the TSMC 10 nm

Intel 3D XPoint

Posted: May 16, 2017 3D XPoint technology was unveiled by Intel and Micron in August 2015, creating the first new memory category in more than 25 years. When Intel announced the Optane brand for storage products based on 3D XPoint technology, it would first come to market in a new line of high

Sony IMX400 3-Layer Stacked (Exmor RS) CMOS Image Sensor

Posted: May 11, 2017 Sony Mobile announced the Xperia XZs at Mobile World Congress in February 2017. The Xperia XZs features a 1/2.3-inch optical format, 19 Mp resolution, Exmor RS “Motion Eye” camera offering with 960 fps video and predictive capture. The super slow motion functionality is made

Samsung 10 nm LPE Process

Posted: April 26, 2017 The Qualcomm Snapdragon 835 applications processor found in the Samsung Galaxy S8 is confirmed to be built on Samsung’s 10 nm LPE process. Debut devices for the 10 nm LPE are the Qualcomm Snapdragon 835 and the Samsung Exynos 9 application processors. We have started our

Qualcomm WTR5975 Gigabit LTE Transceiver

Posted: April 20, 2017 Qualcomm WTR5975 Gigabit LTE Transceiver The WTR5975 is a member of the Snapdragon 835 family found in the Samsung Galaxy S8 and is the world’s first single-chip RF IC supporting Gigabit Class LTE, LTE-U, and LAA with 5 GHz unlicensed band support. The highly integrated

Apple W1 343S00131 Bluetooth Module

Posted: January 20, 2017 Apple W1 343S00131 Bluetooth Module The W1 chip found in the Beats Studio wireless headphone has the package mark 343S00131. Meanwhile, the W1 chip torn down from the Apple AirPods has the package mark 343S00130. They have a slight difference in the last digit in the package