Featured Report Analysis
MPR Editorial: Nanometer Nonsense
Both leading foundries allowed customers to claim they were using a 4nm process when, in fact, they were using 5nm technology. This situation renders node names meaningless. Featured in our July 22 Microprocessor Report we are making this available, in full, for a limited time.
ROHM Gen 4: A Technical Review
A collaboration between Dr. Stephen Russell (TechInsights) and Prof. Peter Gammon (PGC). ROHM released their 4th generation (Gen 4) MOSFET products this year. The new range includes MOSFETs rated to 750 V (increased from 650V) and 1200 V, with a number of the available TO247 packaged components automotive qualified up to 56A/24mΩ.
Disruptive Technology: 7nm SMIC MinerVa Bitcoin Miner
TechInsights has discovered what appears to be SMIC 7nm technology in the MinerVa Bitcoin Miner SoC. Learn why this matters and its market impact by downloading our Disruptive Technology Brief today.
Disruptive Technology: ROHM Generation 4 SiC MOSFET
New ROHM 4th Generation SiC MOSFETs Featuring the Industry’s Lowest ON Resistance. Download the product brief for more details, and for a high-resolution image showing the trench structure with annotations.
Qualcomm QTM545 Analysis
The Samsung Galaxy S22 Ultra has the latest and greatest Qualcomm mmWave, but not in Europe...
Disruptive Technology: TSMC 22ULL eMRAM
TSMC 22ULL eMRAM Die removed from Ambiq™ Apollo4 Another Disruptive Technology on Embedded Memory! Another disruptive product on embedded Memory (eMemory) has been arrived and quickly reviewed! TSMC has successfully developed and commercialized 22 nm
Micron 176L 3D NAND
NAND Memory Technology Micron B47R 3D CTF CuA NAND Die , the World’s First 176L (195T)! Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its
Micron DDR5 DIMM Technology
DRAM Memory Technology Disruptive Product: What technology node for 1st DDR5 DIMM? DDR5 is a new generation of Memory! All the major DRAM players are moving forward to a faster DRAM, DDR5. DDR5 improves power management (1.1V vs. 1.2V for DDR4) as
Micron 1α DRAM Technology
DRAM Memory Technology Micron D1α, '14 nm'! The Most Advanced Node Ever on DRAM! D1α! It’s 14 nm! After a quick view on Micron D1α die (die markings: Z41C) and cell design, it’s the most advanced technology node ever on DRAM. Further, it’s the first
Groundbreaking SenSWIR Sensor by Sony- IMX990/IMX991
This approach presents two advantages, the Cu-Cu DBI can help reduce the overall height of the Die while Die-to-Wafer hybridization can help reduce the per-Die cost, thereby facilitating greater utilization of Sony’s SWIR technology for a wide range of applications. Recently, TechInsights revealed the first detailed cross-sectional image of the 1.34MP.
Qualcomm Snapdragon 888 in the Xiaomi Mi 11 brings a new 5 nm entrant to market
February 03, 2021 Logic Disruptive Technology Qualcomm Snapdragon 888 in the Xiaomi Mi 11 brings a new 5 nm entrant to market With their release of the Snapdragon 888, Qualcomm finds itself in competition with other 5 nm offerings - the Apple A14 and
Sony d-ToF Sensor found in Apple’s new LiDAR camera
January 19, 2021 Image Sensor Disruptive Technology Sony d-ToF Sensor found in Apple’s new LiDAR camera Apple’s LiDAR camera was first observed in 2020’s iPad Pro; as expected, we saw that same part used in the iPhone 12 Pro in October. Industry
SK hynix 128L 3D PUC NAND (4D NAND)
SK hynix has released the world’s first 128-layer (128L) 3D NAND, which they have termed 4D NAND. This is their second NAND generation built using Periphery Under Cell (PUC) architecture; the first was their 96L NAND. In PUC architecture, peripheral
Analysis of Qualcomm's Snapdragon SDR865 Transceiver; supporting 5G sub-6 Ghz and LTE services
The Snapdragon 865 platform is Qualcomm's most advanced 5G chipset to date with support for 5G, sub-6, mmWave and LTE. 4G/5G dynamic spectrum sharing, will enable "operators to accelerate 5G deployments by using their existing 4G spectrum holdings to
TechInsights Confirms Samsung’s true 7LPP process in the Samsung Exynos 990
Last year, Samsung announced the introduction of EUV into their 7LPP process used in the Exynos 9825. Through analysis of the part, we found little difference between their 7LPP process in the 9825 and their 8LPP process in the Exynos 9820. Now, we
Recent Analysis of Samsung’s Mobile RF Components
Shannon 5800 55M5800A01 As the industry expands its use of 5G, Samsung continues to innovate in the area of mobile communication technologies, including RF transceivers and phased array solutions for mmWave along with 5G-embedded mobile processors
Recent MediaTek Mobile RF Components and Analysis
MT6303P AN10516CW 2.95 x 1.74 - 180nm Mobile RF architecture is constantly increasing in complexity to support multiple standards, and we are discovering new mobile RF components in virtually every new phone release. At the time of this writing
Intel Core i7-1065G7 “Ice Lake” 10 nm 2nd Gen Processor Analysis
Intel has released their first 10 nm 2 nd Gen processor into consumer products – the Intel Core i7-1065G7 processor, better known as Ice Lake. Dell and Microsoft have already announced the inclusion of Ice Lake in some of their latest offerings. This