TechInsights - Intellectual Property (IP) Lifecycle & Strategy, Technical Analysis Reports, Monetize Patents, Defensive IP Licensing, Medical Devices & Technology Product Analysis, Teardowns

Date

Between and
Apply
Enter a range of years to filter items by the date that they were published.

Please use the refiners below to narrow down your result set.

Report Channel
Digital Home (7)
Solid State Drives (7)
Cameras (1)
Mobile Devices (1)

Advanced | Help

Sort By:

Results 1 - 10 of 145

Micron Wins Insight Award for Most Innovative Memory Device and Semiconductor of the Year

Web Page | Published: 29 July 2014

…the-Year Micron Wins Insight Award for Most Innovative Memory Device and Semiconductor…3seminlidcekt01ubmtechinsights Micron Wins Insight Award for Most Innovative Memory Device and Semiconductor… ~ Similar Results
Memory Detailed Structural Analysis of the Micron MT29F768G08EEHBBJ4-3R:B 384 Gb 32L 3D NAND Flash Memory

Report | Key: 11241 | ID: 0616-42983-O-5DM-100 | Published: 25 August 2016

This report is a detailed structural analysis of the Micron MT29F768G08EEHBBJ4-3R:B 96 GB 32L 3D NAND Flash Memory. Micron’s 32L 3D NAND die features a 38 gate layer stack comprising 32 NAND cell gates... ~ Similar Results
Memory Detailed Structural of the 20 nm Node Micron MT58K256M32JA-100:A 1 GB GDDR5X SDRAM

Report | Key: 11258 | ID: 0716-43012-O-5DM-100 | Published: 29 August 2016

This report is a detailed structural analysis of the 20 nm node Micron MT58K256M32JA-100:A 1 GB GDDR5X SDRAM. The 10-14 Gbps quad data rate (QDR) GDDR5X memory has a 32-bit interface and is packaged in... ~ Similar Results
Memory Detailed Structural Analysis of the Micron 16 nm NAND Flash Memory

Report | Key: 9897 | ID: 0314-36532-O-5DM-101 | Published: 23 May 2014

This report is a detailed structural analysis (MDSA) of the Micron 16 nm node NAND Flash memory (Intel L95B 2012(M)(C) die markings). At 16 nm, this device is not only the most advanced Flash memory produced... ~ Similar Results
Process comparison of 1x and 1y nm NAND Flash memory devices manufactured by Toshiba/SanDisk, Micron/Intel, SK-Hynix and Samsung

Report | Key: 10984 | ID: 0116-00000-O-6CO-100 | Published: 27 May 2016

This report is a comparison of four leading-edge 1x and 1y nm NAND Flash cell architectures used by Toshiba/SanDisk 15 nm, IM Flash Technologies 16 nm, SK-Hynix 16 nm and Samsung 16 nm NAND Flash memories.... ~ Similar Results
Memory Detailed Structural Analysis of the of the Micron 42nm 2Gbit DDR3 SDRAM

Report | Key: 6664 | ID: 0310-23602-O-5DM-10 | Published: 28 March 2010

This report is a detailed structural analysis of the Micron 42 nm 2 Gbit DDR3 SDRAM. The Micron 42 nm SDRAM is a 2 Gbit DDR3 SDRAM operating at 1.35 V to 1.5 V. The die is fabricated using a 4 metal... ~ Similar Results
Memory Detailed Structural Analysis of the MT41K512M8RH-125:E Micron/Nanya 30nm-class DDR3 SDRAM

Report | Key: 8645 | ID: 0912-31051-O-5DM-11 | Published: 19 September 2012

This report is a detailed structural analysis (MDSA) of the Micron/Nanya 30 nm-class DDR3 SDRAM. The Micron/Nanya MT41K512M8RH-125 is a DDR3L SDRAM (1.35V), a low voltage version of the DDR3 SDRAM. It... ~ Similar Results
Memory Detailed Structural Analysis of the Micron Technology 50nm MT41J128M16HA15E-D DDR3 SDRAM

Report | Key: 6886 | ID: 0710-23945-O-5DM-10 | Published: 28 July 2010

This report is a detailed structural analysis (MDSA) of the Micron 50 nm MT41J128M16HA15E-D DDR3 SDRAM. The Micron 50 nm SDRAM is a 2 Gbit DDR3 SDRAM operating from 1.35 to 1.5 V. The device is fabricated... ~ Similar Results
Memory Detailed Structural Analysis on the Micron (IMFT) MT29F32G08 34nm 32Gbit MLC NAND Flash

Report | Key: 5272 | ID: 0209-21425-O-5DM-12 | Published: 28 February 2009

This report is a detailed analysis (MDSA) of the 34 nm node Micron (IMFT) MT29F32G08 32 Gbit MLC NAND flash memory. the IM Flash MT29F32G08 32Gb flash. The device is fabricated in a 3-poly, 2-copper... ~ Similar Results
Memory Detailed Structural Analysis of the Intel/Micron (IMFT) 25nm 64Gbit MLC NAND Flash

Report | Key: 6679 | ID: 0310-23577-O-5DM-11 | Published: 28 March 2010

This report is a detailed structural analysis (MDSA) of the Intel/Micron (IMFT) 25 nm 64 Gbit MLC NAND flash memory. The IMFT 64 Gb 25 nm flash memory is fabricated in a 2-poly, 1 tungsten metal and 2-copper... ~ Similar Results

First
Previous
1
2
3
4
5
6
7
8
9
10
Next
Last

Per page:

Find More

Search Reports Latest Reports Types of Reports Roadmaps

Latest Reports

Micron 20 nm Node 1 GB GDDR5X SDRAM Memory Detailed Structural Analysis

Micron 32L 3D NAND Flash Structural Analysis

Process Comparison of 1x and 1y nm NAND Flash Memory Devices manufactured by Toshiba/SanDisk, Micron/Intel, SK hynix and Samsung

Subscribe to our Quarterly Newsletter

Services

Prior Art Evidence of Use Expert Witness

Capabilities

Structural/Process Analysis Circuit Analysis Systems & Software Analysis

Subscribe to our Quarterly Newsletter

Patent Portfolio Services

IP-Enabled Business Strategy Patent Portfolio Management Patent Landscaping Portfolio Audit Portfolio Mining for Licensing or Sales Licensing / Litigation Support

Patent Landscape

Register for Webcast

Patent Portfolio Services

Patent Sales Patent Acquisition Technologies of Interest Patent Transaction Management Patent Transaction Team

Latest News & Articles

Mobile Phone Touch Screen Controller, Display Driver Chips Become One - 09.06.2016

Soitec Bounces Back, Makes Gains in Mobile Phones, Automotive - 08.17.2016

Are negotiation-grade patents still valuable? - 08.05.2016

Is Patent Licensing or Sales Part of Your IP Strategy? - 07.27.2016

Register Your Interest

Search

Date

Report Type

Report Channel

Device Type

Manufacturer

Intellectual Property Consulting